3SK202Q Datasheet. Specs and Replacement

Type Designator: 3SK202Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 135 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm

Package: TO120

3SK202Q substitution

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3SK202Q datasheet

 ..1. Size:440K  1
3sk202q 3sk202r.pdf pdf_icon

3SK202Q

/ e c cle stage. d n e a u n n i e t t n n i o a c s maintenance type planed maintenance type M i discontinued type planed discontinued typed D http //panasonic.net/sc/en Maintenance/Discontinued includes following four Product lifecy Please visit following URL about latest information. Request for your special attention and precautions in using the technical... See More ⇒

 9.1. Size:43K  1
3sk206.pdf pdf_icon

3SK202Q

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES PACKAGE DIMENSIONS Suitable for use as RF amplifier in UHF TV tuner. in millimeters Low Crss 0.02 pF TYP. 2.8+0.2 0.3 High GPS 20 dB TYP. 1.5+0.2 0.1 Low NF 1.1 dB TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25 ... See More ⇒

 9.2. Size:183K  toshiba
3sk207.pdf pdf_icon

3SK202Q

3SK207 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK207 TV Tuner, UHF RF Amplifier Applications Unit mm Superior cross modulation performance. Low reverse transfer capacitance C = 0.015 pF (typ.) rss Low noise figure NF = 1.9dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 13... See More ⇒

Detailed specifications: 3SK181-6, 3SK182, 3SK186, 3SK192P, 3SK192Q, 3SK193P, 3SK193Q, 3SK194, AON7408, 3SK202R, 3SK206, 3SK222, 3SK219, 3SK223, 3SK224, 3SK227, 3SK37

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs