IXTR30N25 Datasheet. Specs and Replacement
Type Designator: IXTR30N25 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: ISOPLUS247
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IXTR30N25 substitution
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IXTR30N25 datasheet
ixtr30n25.pdf
Advance Technical Information Standard Power MOSFETs IXTR 30N25 VDSS = 250 V ISOPLUS247TM ID (cont) = 25 A RDS(on) = 75 m (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGS Continu... See More ⇒
Detailed specifications: IXTQ90N15T, IXTQ96N15P, IXTQ96N20P, IXTQ96N25T, IXTR16P60P, IXTR170P10P, IXTR200N10P, IXTR20P50P, AOD4184A, IXTR32P60P, IXTR36P15P, IXTR40P50P, IXTR48P20P, IXTR62N15P, IXTR90P10P, IXTR90P20P, IXTT100N25P
Keywords - IXTR30N25 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: PDN2312S | IXTQ96N20P | IXTV250N075TS | PDD0906 | TSM1NB60SCT | AP4024GEMT | UPA2757GR
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