All MOSFET. IXTR32P60P Datasheet

 

IXTR32P60P Datasheet and Replacement


   Type Designator: IXTR32P60P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 480 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
   Package: ISOPLUS247
 

 IXTR32P60P substitution

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IXTR32P60P Datasheet (PDF)

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IXTR32P60P

Advance Technical InformationStandard Power MOSFETsIXTR 30N25VDSS = 250 VISOPLUS247TM ID (cont) = 25 ARDS(on) = 75 m(Electrically Isolated Backside)N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 VVGS Continu

Datasheet: IXTQ96N15P , IXTQ96N20P , IXTQ96N25T , IXTR16P60P , IXTR170P10P , IXTR200N10P , IXTR20P50P , IXTR30N25 , AO4407A , IXTR36P15P , IXTR40P50P , IXTR48P20P , IXTR62N15P , IXTR90P10P , IXTR90P20P , IXTT100N25P , IXTT10N100D .

History: IXFT30N60X | IXFT23N60Q | IXFT30N60Q | RJK0204DPA | IXTR40P50P | IXTT52N30P | IXTT50P085

Keywords - IXTR32P60P MOSFET datasheet

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