IXTR32P60P Specs and Replacement
Type Designator: IXTR32P60P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 480 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: ISOPLUS247
IXTR32P60P substitution
IXTR32P60P datasheet
ixtr30n25.pdf
Advance Technical Information Standard Power MOSFETs IXTR 30N25 VDSS = 250 V ISOPLUS247TM ID (cont) = 25 A RDS(on) = 75 m (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGS Continu... See More ⇒
Detailed specifications: IXTQ96N15P , IXTQ96N20P , IXTQ96N25T , IXTR16P60P , IXTR170P10P , IXTR200N10P , IXTR20P50P , IXTR30N25 , AO4407A , IXTR36P15P , IXTR40P50P , IXTR48P20P , IXTR62N15P , IXTR90P10P , IXTR90P20P , IXTT100N25P , IXTT10N100D .
Keywords - IXTR32P60P MOSFET specs
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IXTR32P60P replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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