All MOSFET. IXTR32P60P Datasheet

 

IXTR32P60P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTR32P60P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 196 nC

Rise Time (tr): 480 nS

Maximum Drain-Source On-State Resistance (Rds): 0.385 Ohm

Package: ISOPLUS247

IXTR32P60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTR32P60P Datasheet (PDF)

5.1. ixtr30n25.pdf Size:77K _ixys

IXTR32P60P
IXTR32P60P

Advance Technical Information Standard Power MOSFETs IXTR 30N25 VDSS = 250 V ISOPLUS247TM ID (cont) = 25 A Ω RDS(on) = 75 mΩ Ω Ω Ω (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continu

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