All MOSFET. IXTR62N15P Datasheet

 

IXTR62N15P Datasheet and Replacement


   Type Designator: IXTR62N15P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 150 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: ISOPLUS247
 

 IXTR62N15P substitution

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IXTR62N15P Datasheet (PDF)

 9.1. Size:198K  ixys
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IXTR62N15P

Advance Technical InformationTrenchPTM VDSS = - 200VIXTR68P20TPower MOSFET ID25 = - 44A RDS(on) 64m P-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C - 200 VGVDGR TJ = 25C to 150C, RGS = 1M - 200 VIsolated TabDSVGSS Continuous 15 VVGSM Transient

Datasheet: IXTR170P10P , IXTR200N10P , IXTR20P50P , IXTR30N25 , IXTR32P60P , IXTR36P15P , IXTR40P50P , IXTR48P20P , BS170 , IXTR90P10P , IXTR90P20P , IXTT100N25P , IXTT10N100D , IXTT10N100D2 , IXTT10P50 , IXTT10P60 , IXTT110N10L2 .

History: IRF2805L

Keywords - IXTR62N15P MOSFET datasheet

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