IXTT1N100 Datasheet. Specs and Replacement

Type Designator: IXTT1N100  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 710 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm

Package: TO268

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IXTT1N100 datasheet

 ..1. Size:73K  ixys
 ixth1n100 ixtt1n100.pdf pdf_icon

IXTT1N100

Advance Technical Information VDSS = 1000 V IXTH 1N100 High Voltage MOSFET ID25 = 1.5 A IXTT 1N100 RDS(on) = 11 N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC ... See More ⇒

 8.1. Size:155K  ixys
 ixtt1n450hv.pdf pdf_icon

IXTT1N100

Advance Technical Information High Voltage VDSS = 4500V IXTT1N450HV Power MOSFET ID25 = 1A RDS(on) 85 N-Channel Enhancement Mode TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 4500 V VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V G = Gate D = Drain S = Source Tab = Drain VGSS Continuous 20 V VGSM ... See More ⇒

 8.2. Size:208K  ixys
 ixth1n300p3hv ixtt1n300p3hv.pdf pdf_icon

IXTT1N100

Preliminary Technical Information High Voltage VDSS = 3000V IXTT1N300P3HV Power MOSFET ID25 = 1.00A IXTH1N300P3HV RDS(on) 50 N-Channel Enhancement Mode TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 3000 V TO-247HV (IXTH) VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS... See More ⇒

 8.3. Size:152K  ixys
 ixtt1n250hv.pdf pdf_icon

IXTT1N100

Advance Technical Information High Voltage VDSS = 2500V IXTT1N250HV ID25 = 1.5A Power MOSFET RDS(on) 40 N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 2500 V G = Gate D = Drain S = Source Tab = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V VGSS Contin... See More ⇒

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Detailed specifications: IXTT120N15P, IXTT12N140, IXTT140N10P, IXTT16N10D2, IXTT16N20D2, IXTT16N50D2, IXTT16P60P, IXTT170N10P, IRF3710, IXTT20N50D, IXTT20P50P, IXTT24N50Q, IXTT24P20, IXTT26N50P, IXTT26N60P, IXTT28N50Q, IXTT30N50L

Keywords - IXTT1N100 MOSFET specs

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