3SK219 Datasheet. Specs and Replacement

Type Designator: 3SK219

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 1.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 71 Ohm

Package: MINI-TYPE

3SK219 substitution

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3SK219 datasheet

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3SK219

High Frequency FETs 3SK219 3SK219 Silicon N-Channel 4-pin MOS Unit mm For VHF amplification +0.2 2.8 0.3 +0.2 0.65 0.15 1.5 0.3 0.65 0.15 Features Low noise-figure (NF) 0.5R 4 1 Large power gain PG Downsizing of sets by mini power package and automatic insertion by taping/magazine packing are available. 3 2 Absolute Maximum Ratings (Ta = 25 C) 0.4 0.2 Para... See More ⇒

Detailed specifications: 3SK192Q, 3SK193P, 3SK193Q, 3SK194, 3SK202Q, 3SK202R, 3SK206, 3SK222, IRF9540N, 3SK223, 3SK224, 3SK227, 3SK37, 3SK38, 3SK38A, 3SK39, 3SK40

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs