3SK219 Datasheet and Replacement
Type Designator: 3SK219
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 1.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 71 Ohm
Package: MINI-TYPE
3SK219 substitution
3SK219 Datasheet (PDF)
3sk219.pdf
High Frequency FETs 3SK2193SK219Silicon N-Channel 4-pin MOSUnit : mmFor VHF amplification+0.22.8 0.3+0.20.65 0.15 1.5 0.3 0.65 0.15 Features Low noise-figure (NF)0.5R4 1 Large power gain PG Downsizing of sets by mini power package and automatic insertionby taping/magazine packing are available.3 2 Absolute Maximum Ratings (Ta = 25C)0.4 0.2Para
Datasheet: 3SK192Q , 3SK193P , 3SK193Q , 3SK194 , 3SK202Q , 3SK202R , 3SK206 , 3SK222 , IRF9540N , 3SK223 , 3SK224 , 3SK227 , 3SK37 , 3SK38 , 3SK38A , 3SK39 , 3SK40 .
Keywords - 3SK219 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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