IXTT40N50L2 Datasheet. Specs and Replacement

Type Designator: IXTT40N50L2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO268

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IXTT40N50L2 datasheet

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IXTT40N50L2

High Voltage VDSS = 1500V IXTA4N150HV ID25 = 4A Power MOSFETs IXTT4N150HV RDS(on) 6 N-Channel Enhancement Mode Fast Intrinsic Diode TO-263HV Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1500 V S VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V D (Tab) VGSS Continuous 30 V VGSM Trans... See More ⇒

Detailed specifications: IXTT28N50Q, IXTT30N50L, IXTT30N50L2, IXTT30N50P, IXTT30N60L2, IXTT30N60P, IXTT360N055T2, IXTT36N50P, IRF9540N, IXTT440N055T2, IXTT48P20P, IXTT500N04T2, IXTT50N30, IXTT50P085, IXTT50P10, IXTT52N30P, IXTT60N10

Keywords - IXTT40N50L2 MOSFET specs

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