All MOSFET. IXTT48P20P Datasheet

 

IXTT48P20P Datasheet and Replacement


   Type Designator: IXTT48P20P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 462 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 260 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO268
 

 IXTT48P20P substitution

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IXTT48P20P Datasheet (PDF)

 9.1. Size:190K  ixys
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IXTT48P20P

High Voltage VDSS = 1500VIXTA4N150HVID25 = 4APower MOSFETsIXTT4N150HV RDS(on) 6 N-Channel Enhancement ModeFast Intrinsic DiodeTO-263HVSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1500 VSVDGR TJ = 25C to 150C, RGS = 1M 1500 VD (Tab)VGSS Continuous 30 VVGSM Trans

Datasheet: IXTT30N50L2 , IXTT30N50P , IXTT30N60L2 , IXTT30N60P , IXTT360N055T2 , IXTT36N50P , IXTT40N50L2 , IXTT440N055T2 , IRLB4132 , IXTT500N04T2 , IXTT50N30 , IXTT50P085 , IXTT50P10 , IXTT52N30P , IXTT60N10 , IXTT60N20L2 , IXTT64N25P .

History: IXTT50P085 | CHM9407AJGP | HGN120N06SL | CHM8958JGP | CHM8938JGP | STP8NM60FP | NCE60H10D

Keywords - IXTT48P20P MOSFET datasheet

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