IXTU1N80P Datasheet. Specs and Replacement

Type Designator: IXTU1N80P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Id| ⓘ - Maximum Drain Current: 1 A

Electrical Characteristics

tr ⓘ - Rise Time: 700 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm

Package: TO251

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IXTU1N80P datasheet

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IXTU1N80P

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET RDS(on) 14 IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25 C to 150 C 800 V VD... See More ⇒

Detailed specifications: IXTT8P50, IXTT90P10P, IXTT96N15P, IXTT96N20P, IXTU01N100D, IXTU02N50D, IXTU05N100, IXTU12N06T, RFP50N06, IXTU1R4N60P, IXTU2N80P, IXTU4N60P, IXTU5N50P, IXTV02N250S, IXTV03N400S, IXTV102N20T, IXTV110N25TS

Keywords - IXTU1N80P MOSFET specs

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