All MOSFET. IXTU1N80P Datasheet

 

IXTU1N80P Datasheet and Replacement


   Type Designator: IXTU1N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   tr ⓘ - Rise Time: 700 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: TO251
 

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IXTU1N80P Datasheet (PDF)

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IXTU1N80P

Preliminary Technical InformationVDSS = 800VIXTA1N80PPolarTM PowerID25 = 1AIXTP1N80PMOSFET RDS(on) 14 IXTU1N80PIXTY1N80PN-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU)GG(TAB)(TAB)(TAB)S G DDSSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 150C 800 VVD

Datasheet: IXTT8P50 , IXTT90P10P , IXTT96N15P , IXTT96N20P , IXTU01N100D , IXTU02N50D , IXTU05N100 , IXTU12N06T , SKD502T , IXTU1R4N60P , IXTU2N80P , IXTU4N60P , IXTU5N50P , IXTV02N250S , IXTV03N400S , IXTV102N20T , IXTV110N25TS .

History: PN4303 | SI2309DS | H7N0607DL | ELM33412CA | AP9T18GEJ | FQU13N06L

Keywords - IXTU1N80P MOSFET datasheet

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