All MOSFET. IXTU1N80P Datasheet

 

IXTU1N80P Datasheet and Replacement


   Type Designator: IXTU1N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   trⓘ - Rise Time: 700 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: TO251
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IXTU1N80P Datasheet (PDF)

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IXTU1N80P

Preliminary Technical InformationVDSS = 800VIXTA1N80PPolarTM PowerID25 = 1AIXTP1N80PMOSFET RDS(on) 14 IXTU1N80PIXTY1N80PN-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU)GG(TAB)(TAB)(TAB)S G DDSSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 150C 800 VVD

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MCG30N03 | DMNH10H028SCT | WML11N80M3 | HUF76423D3 | APT1204R7SFLLG | AM8820 | IRLS4030

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