IXTU4N60P Specs and Replacement
Type Designator: IXTU4N60P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Id| ⓘ - Maximum Drain Current: 4 A
Electrical Characteristics
tr ⓘ - Rise Time: 500 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO251
IXTU4N60P substitution
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IXTU4N60P datasheet
ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf
IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) 2.0 N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient 40 V ... See More ⇒
Detailed specifications: IXTT96N20P , IXTU01N100D , IXTU02N50D , IXTU05N100 , IXTU12N06T , IXTU1N80P , IXTU1R4N60P , IXTU2N80P , 18N50 , IXTU5N50P , IXTV02N250S , IXTV03N400S , IXTV102N20T , IXTV110N25TS , IXTV18N60P , IXTV18N60PS , IXTV200N10T .
Keywords - IXTU4N60P MOSFET specs
IXTU4N60P cross reference
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