IXTU4N60P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTU4N60P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 89 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Drain Current |Id|: 4 A
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 500 nS
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: TO251
IXTU4N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTU4N60P Datasheet (PDF)
0.1. ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf 
Size:141K _ixys
IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) ≤ 2.0 Ω ≤ Ω ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V TO-220 (IXTP) VGSS Continuous ±30 V VGSM Transient ±40 V
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