All MOSFET. IXTU4N60P Datasheet

 

IXTU4N60P Datasheet and Replacement


   Type Designator: IXTU4N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   trⓘ - Rise Time: 500 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO251
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IXTU4N60P Datasheet (PDF)

 ..1. Size:141K  ixys
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IXTU4N60P

IXTA4N60P VDSS = 600 VPolarHVTMIXTP4N60P ID25 = 4 APower MOSFETIXTU4N60P RDS(on) 2.0 N-Channel Enhancement ModeIXTY4N60PAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient 40 V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: OSG60R070HT3ZF | NTHL050N65S3HF | 2SK4196LS | H7N0312AB | DMS2220LFW | HM4449 | RU60190R

Keywords - IXTU4N60P MOSFET datasheet

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