All MOSFET. IXTU4N60P Datasheet

 

IXTU4N60P Datasheet and Replacement


   Type Designator: IXTU4N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 500 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO251
 

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IXTU4N60P Datasheet (PDF)

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IXTU4N60P

IXTA4N60P VDSS = 600 VPolarHVTMIXTP4N60P ID25 = 4 APower MOSFETIXTU4N60P RDS(on) 2.0 N-Channel Enhancement ModeIXTY4N60PAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient 40 V

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History: STH65N05 | FDG8842CZ | STE250N06

Keywords - IXTU4N60P MOSFET datasheet

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