IXTU4N60P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTU4N60P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 500 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO251
IXTU4N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTU4N60P Datasheet (PDF)
ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf
IXTA4N60P VDSS = 600 VPolarHVTMIXTP4N60P ID25 = 4 APower MOSFETIXTU4N60P RDS(on) 2.0 N-Channel Enhancement ModeIXTY4N60PAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient 40 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXTV200N10TS
History: IXTV200N10TS
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