All MOSFET. IXTU4N60P Datasheet

 

IXTU4N60P Datasheet and Replacement


   Type Designator: IXTU4N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   tr ⓘ - Rise Time: 500 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO251
 

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IXTU4N60P Datasheet (PDF)

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IXTU4N60P

IXTA4N60P VDSS = 600 VPolarHVTMIXTP4N60P ID25 = 4 APower MOSFETIXTU4N60P RDS(on) 2.0 N-Channel Enhancement ModeIXTY4N60PAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient 40 V

Datasheet: IXTT96N20P , IXTU01N100D , IXTU02N50D , IXTU05N100 , IXTU12N06T , IXTU1N80P , IXTU1R4N60P , IXTU2N80P , RU6888R , IXTU5N50P , IXTV02N250S , IXTV03N400S , IXTV102N20T , IXTV110N25TS , IXTV18N60P , IXTV18N60PS , IXTV200N10T .

History: RDX100N60FU6

Keywords - IXTU4N60P MOSFET datasheet

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