All MOSFET. IXTV03N400S Datasheet

 

IXTV03N400S Datasheet and Replacement


   Type Designator: IXTV03N400S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 4000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16.3 nC
   tr ⓘ - Rise Time: 2.8 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 290 Ohm
   Package: PLUS220SMD
 

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IXTV03N400S Datasheet (PDF)

 ..1. Size:186K  ixys
 ixth03n400 ixtv03n400s.pdf pdf_icon

IXTV03N400S

Advance Technical InformationHigh Voltage VDSS = 4000VIXTH03N400ID25 = 300mAPower MOSFET IXTV03N400S RDS(on) 290 N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 4000 VDD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 4000 VVGSS Continuous 20 VVGSM Transie

 9.1. Size:194K  ixys
 ixth02n250 ixtv02n250s.pdf pdf_icon

IXTV03N400S

High VoltageIXTH02N250VDSS = 2500VPower MOSFETsID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GD D (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VPLUS220SMD (IXTV_S)VDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VVGSM Transient

Datasheet: IXTU05N100 , IXTU12N06T , IXTU1N80P , IXTU1R4N60P , IXTU2N80P , IXTU4N60P , IXTU5N50P , IXTV02N250S , IRFB31N20D , IXTV102N20T , IXTV110N25TS , IXTV18N60P , IXTV18N60PS , IXTV200N10T , IXTV200N10TS , IXTV22N50P , IXTV22N50PS .

History: BS250CSM4

Keywords - IXTV03N400S MOSFET datasheet

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