IXTV30N60PS Datasheet. Specs and Replacement

Type Designator: IXTV30N60PS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: PLUS220SMD

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IXTV30N60PS substitution

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IXTV30N60PS datasheet

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IXTV30N60PS

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IXTV30N60PS

VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET RDS(on) 200 m IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuo... See More ⇒

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IXTV30N60PS

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V (TAB) D S VGS Continuous 30 V VGS... See More ⇒

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Detailed specifications: IXTV26N60PS, IXTV270N055T2, IXTV270N055T2S, IXTV280N055T, IXTV280N055TS, IXTV30N50P, IXTV30N50PS, IXTV30N60P, IRFP064N, IXTV36N50P, IXTV36N50PS, IXTV86N25T, IXTV96N25T, IXTX110N20L2, IXTX170P10P, IXTX17N120L, IXTX200N10L2

Keywords - IXTV30N60PS MOSFET specs

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