IXTV86N25T Datasheet and Replacement

   Type Designator: IXTV86N25T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Id| ⓘ - Maximum Drain Current: 86 A
   Qg ⓘ - Total Gate Charge: 105 nC
   tr ⓘ - Rise Time: 156 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: PLUS220
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