IXTX110N20L2 MOSFET Datasheet: N-Ch, 200V, 110A. Full specification with pinout and replacement list

IXTX110N20L2 Specs and Replacement

   Type Designator: IXTX110N20L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 960 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 420 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: PLUS247

IXTX110N20L2 substitution

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IXTX110N20L2 datasheet

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Advance Technical Information LinearL2TM Power VDSS = 200V IXTK110N20L2 MOSFET w/Extended ID25 = 110A IXTX110N20L2 FBSOA RDS(on) ... See More ⇒

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Advance Technical Information TrenchPTM VDSS = - 200V IXTK120P20T Power MOSFETs ID25 = - 120A IXTX120P20T RDS(on) 30m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C - 200 V D S VDGR TJ = 25 C to 150 C, RGS ... See More ⇒

9.2. Size:177K ixys
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PolarPTM VDSS = -100V IXTK170P10P ID25 = -170A Power MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V G D (TAB) S VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C -1... See More ⇒

9.3. Size:88K ixys
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