IXTX110N20L2 - описание и поиск аналогов

Advance Technical Information LinearL2TM Power VDSS = 200V IXTK110N20L2 MOSFET w/Extended ID25 = 110A IXTX110N20L2 FBSOA RDS(on)

Advance Technical Information TrenchPTM VDSS = - 200V IXTK120P20T Power MOSFETs ID25 = - 120A IXTX120P20T RDS(on) 30m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C - 200 V D S VDGR TJ = 25 C to 150 C, RGS

PolarPTM VDSS = -100V IXTK170P10P ID25 = -170A Power MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V G D (TAB) S VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C -1

Advance Technical Information X2-Class VDSS = 650V IXTK120N65X2 Power MOSFET ID25 = 120A IXTX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Continuous 30 V PLUS247 (IX

Preliminary Technical Information X2-Class VDSS = 650V IXTK102N65X2 Power MOSFET ID25 = 102A IXTX102N65X2 RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Contin