IXTX170P10P MOSFET Datasheet: P-Ch, 100V, 170A. Full specification with pinout and replacement list

IXTX170P10P Specs and Replacement

   Type Designator: IXTX170P10P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 170 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 176 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PLUS247

IXTX170P10P substitution

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IXTX170P10P datasheet

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ixtk170p10p ixtx170p10p.pdf pdf_icon

PolarPTM VDSS = -100V IXTK170P10P ID25 = -170A Power MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V G D (TAB) S VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C -1... See More ⇒

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9.1. Size:178K ixys
ixtk120p20t ixtx120p20t.pdf pdf_icon

Advance Technical Information TrenchPTM VDSS = - 200V IXTK120P20T Power MOSFETs ID25 = - 120A IXTX120P20T RDS(on) 30m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C - 200 V D S VDGR TJ = 25 C to 150 C, RGS ... See More ⇒

9.2. Size:159K ixys
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Advance Technical Information X2-Class VDSS = 650V IXTK120N65X2 Power MOSFET ID25 = 120A IXTX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Continuous 30 V PLUS247 (IX... See More ⇒