All MOSFET. IXTX46N50L Datasheet

 

IXTX46N50L Datasheet and Replacement


   Type Designator: IXTX46N50L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 700 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 600 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: PLUS247
 

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IXTX46N50L Datasheet (PDF)

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IXTX46N50L

Preliminary Technical InformationIXTK46N50L VDSS = 500 VLinear Power MOSFETIXTX46N50L ID25 = 46 AWith Extended FBSOA RDS(on) 0.16 N-Channel Enhancement ModeTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGDVGS Continuous 30 VS(TAB)VGSM Transient

Datasheet: IXTX170P10P , IXTX17N120L , IXTX200N10L2 , IXTX20N140 , IXTX22N100L , IXTX24N100 , IXTX32P60P , IXTX40P50P , IRF1404 , IXTX550N055T2 , IXTX5N250 , IXTX600N04T2 , IXTX60N50L2 , IXTX8N150L , IXTX90N25L2 , IXTX90P20P , IXTY01N100 .

History: RP1E100RPTR | RU1088R | AP3A010MT | 2N5398 | ME4413D-G | AM60N10-70P | P0508AT

Keywords - IXTX46N50L MOSFET datasheet

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