All MOSFET. IXTX60N50L2 Datasheet

 

IXTX60N50L2 Datasheet and Replacement


   Type Designator: IXTX60N50L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 960 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 980 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: PLUS247
 

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IXTX60N50L2 Datasheet (PDF)

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IXTX60N50L2

isc N-Channel MOSFET Transistor IXTX60N50L2FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV G

Datasheet: IXTX22N100L , IXTX24N100 , IXTX32P60P , IXTX40P50P , IXTX46N50L , IXTX550N055T2 , IXTX5N250 , IXTX600N04T2 , 10N60 , IXTX8N150L , IXTX90N25L2 , IXTX90P20P , IXTY01N100 , IXTY01N100D , IXTY01N80 , IXTY02N120P , IXTY02N50D .

History: SIHFR9120 | DMN10H120SE | SIHFR9220 | DMN10H120SFG

Keywords - IXTX60N50L2 MOSFET datasheet

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