IXTY3N50P PDF and Equivalents Search

 

IXTY3N50P Specs and Replacement

Type Designator: IXTY3N50P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 400 nS

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO252AA

IXTY3N50P substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTY3N50P datasheet

 ..1. Size:237K  ixys
 ixta3n50p ixtp3n50p ixty3n50p.pdf pdf_icon

IXTY3N50P

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM ... See More ⇒

 8.1. Size:228K  ixys
 ixta3n60p ixtp3n60p ixty3n60p.pdf pdf_icon

IXTY3N50P

IXTA 3N60P VDSS = 600 V PolarHVTM IXTP 3N60P ID25 = 3.0 A Power MOSFET IXTY 3N60P RDS(on) 2.9 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 T... See More ⇒

Detailed specifications: IXTY1R6N50D2 , IXTY1R6N50P , IXTY26P10T , IXTY2N100P , IXTY2N60P , IXTY2N80P , IXTY2R4N50P , IXTY32P05T , 5N65 , IXTY3N60P , IXTY44N10T , IXTY48P05T , IXTY4N60P , IXTY50N085T , IXTY55N075T , IXTY5N50P , IXTY64N055T .

History: HUF75339G3 | IXTY55N075T | IXTZ550N055T2

Keywords - IXTY3N50P MOSFET specs

 IXTY3N50P cross reference
 IXTY3N50P equivalent finder
 IXTY3N50P pdf lookup
 IXTY3N50P substitution
 IXTY3N50P replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


 
↑ Back to Top
.