All MOSFET. IXTY3N50P Datasheet

 

IXTY3N50P Datasheet and Replacement


   Type Designator: IXTY3N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 400 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO252AA
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IXTY3N50P Datasheet (PDF)

 ..1. Size:237K  ixys
 ixta3n50p ixtp3n50p ixty3n50p.pdf pdf_icon

IXTY3N50P

IXTA 3N50P VDSS = 500 VPolarHVTMIXTP 3N50P ID25 = 3.6 APower MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS 30 VVGSM 40 V(TAB)GDSID25 TC = 25 C 3.6 AIDM

 8.1. Size:228K  ixys
 ixta3n60p ixtp3n60p ixty3n60p.pdf pdf_icon

IXTY3N50P

IXTA 3N60PVDSS = 600 VPolarHVTMIXTP 3N60PID25 = 3.0 APower MOSFETIXTY 3N60P RDS(on) 2.9 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGS Continuous 30 VGSVGSM Transient 40 V(TAB)ID25 T

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEP40T20AGU | AP9926GEO | RW1C020UN | IRF441 | STD4N62K3 | BRCS3402MA | GSM3050S

Keywords - IXTY3N50P MOSFET datasheet

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