IXTY64N055T PDF and Equivalents Search

 

IXTY64N055T Specs and Replacement

Type Designator: IXTY64N055T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO252AA

IXTY64N055T substitution

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IXTY64N055T datasheet

 ..1. Size:170K  ixys
 ixtp64n055t ixty64n055t.pdf pdf_icon

IXTY64N055T

Preliminary Technical Information IXTP64N055T VDSS = 55 V TrenchMVTM IXTY64N055T ID25 = 64 A Power MOSFET RDS(on) 13 m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V TO-252 (IXTY) VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V G... See More ⇒

Detailed specifications: IXTY3N50P , IXTY3N60P , IXTY44N10T , IXTY48P05T , IXTY4N60P , IXTY50N085T , IXTY55N075T , IXTY5N50P , STP80NF70 , IXTZ550N055T2 , IXUC160N075 , IXUV170N075 , IXUV170N075S , LKK47-06C5 , MKE11R600DCGFC , FCH110N65F , FCP110N65F .

History: MKE11R600DCGFC

Keywords - IXTY64N055T MOSFET specs

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