All MOSFET. IXTY64N055T Datasheet

 

IXTY64N055T MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTY64N055T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 64 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 30 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252AA

 IXTY64N055T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTY64N055T Datasheet (PDF)

 ..1. Size:170K  ixys
 ixtp64n055t ixty64n055t.pdf

IXTY64N055T IXTY64N055T

Preliminary Technical InformationIXTP64N055T VDSS = 55 VTrenchMVTMIXTY64N055T ID25 = 64 APower MOSFET RDS(on) 13 m N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)D (TAB)GDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VTO-252 (IXTY)VDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient 20 VG

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