All MOSFET. IXTY64N055T Datasheet

 

IXTY64N055T Datasheet and Replacement


   Type Designator: IXTY64N055T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 37 nC
   tr ⓘ - Rise Time: 30 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252AA
 

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IXTY64N055T Datasheet (PDF)

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IXTY64N055T

Preliminary Technical InformationIXTP64N055T VDSS = 55 VTrenchMVTMIXTY64N055T ID25 = 64 APower MOSFET RDS(on) 13 m N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)D (TAB)GDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VTO-252 (IXTY)VDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient 20 VG

Datasheet: IXTY3N50P , IXTY3N60P , IXTY44N10T , IXTY48P05T , IXTY4N60P , IXTY50N085T , IXTY55N075T , IXTY5N50P , 20N50 , IXTZ550N055T2 , IXUC160N075 , IXUV170N075 , IXUV170N075S , LKK47-06C5 , MKE11R600DCGFC , FCH110N65F , FCP110N65F .

Keywords - IXTY64N055T MOSFET datasheet

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