All MOSFET. IXUC160N075 Datasheet

 

IXUC160N075 Datasheet and Replacement


   Type Designator: IXUC160N075
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 250 nC
   tr ⓘ - Rise Time: 120 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: ISOPLUS220
 

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IXUC160N075 Datasheet (PDF)

 ..1. Size:511K  ixys
 ixuc160n075.pdf pdf_icon

IXUC160N075

ADVANCED TECHNICAL INFORMATIONTrench Power MOSFET IXUC160N075 VDSS = 75 VISOPLUS220TM ID25 = 160 AElectrically Isolated Back Surface RDS(on)= 6.5 mISOPLUS 220TMSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C75 VDSIsolated back surface*VGS Continuous 20 VID25 TC = 25C; Note 1 160 A G = Gate, D = Drain,S = SourceID90 TC = 90

 9.1. Size:539K  ixys
 ixuc100n055.pdf pdf_icon

IXUC160N075

ADVANCE TECHNICAL INFORMATIONTrench Power MOSFET IXUC100N055 VDSS = 55 VISOPLUS220TM ID25 = 100 AElectrically Isolated Back Surface RDS(on)= 7.7 mISOPLUS 220TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C55 VGDVGS Continuous 20 VSIsolated back surface*ID25 TC = 25C; Note 1 100 AG = Gate, D = Drain,ID90 TC = 90C, Note 1 8

Datasheet: IXTY44N10T , IXTY48P05T , IXTY4N60P , IXTY50N085T , IXTY55N075T , IXTY5N50P , IXTY64N055T , IXTZ550N055T2 , IRFZ24N , IXUV170N075 , IXUV170N075S , LKK47-06C5 , MKE11R600DCGFC , FCH110N65F , FCP110N65F , MMIX1F520N075T2 , MMIX1T550N055T2 .

History: FQB6N60TM | MTN5N60FP

Keywords - IXUC160N075 MOSFET datasheet

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