All MOSFET. MKE11R600DCGFC Datasheet

 

MKE11R600DCGFC Datasheet and Replacement


   Type Designator: MKE11R600DCGFC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 390 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: I4PAC
 

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MKE11R600DCGFC Datasheet (PDF)

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MKE11R600DCGFC

MKE 11R600DCGFCID25 = 15 ACoolMOS 1) Power MOSFETVDSS = 600 Vwith SiC DiodeRDS(on) max = 0.165 Boost topology3ISOPLUS i4Electrically isolated back surfaceSiC2500 V electrical isolation D411isolated backE72873 5surfaceT2FeaturesMOSFET T Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratingssubstrate VDSS TVJ = 25C 6

Datasheet: IXTY55N075T , IXTY5N50P , IXTY64N055T , IXTZ550N055T2 , IXUC160N075 , IXUV170N075 , IXUV170N075S , LKK47-06C5 , IRFP250 , FCH110N65F , FCP110N65F , MMIX1F520N075T2 , MMIX1T550N055T2 , MMIX1T600N04T2 , VBH40-05B , VHM40-06P1 , VKM40-06P1 .

History: IXTY64N055T | MMIX1F520N075T2

Keywords - MKE11R600DCGFC MOSFET datasheet

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