MKE11R600DCGFC PDF and Equivalents Search

 

MKE11R600DCGFC Specs and Replacement

Type Designator: MKE11R600DCGFC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 390 nS

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: I4PAC

MKE11R600DCGFC substitution

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MKE11R600DCGFC datasheet

 ..1. Size:217K  ixys
 mke11r600dcgfc.pdf pdf_icon

MKE11R600DCGFC

MKE 11R600DCGFC ID25 = 15 A CoolMOS 1) Power MOSFET VDSS = 600 V with SiC Diode RDS(on) max = 0.165 Boost topology 3 ISOPLUS i4 Electrically isolated back surface SiC 2500 V electrical isolation D 4 1 1 isolated back E72873 5 surface T 2 Features MOSFET T Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratings substrate VDSS TVJ = 25 C 6... See More ⇒

Detailed specifications: IXTY55N075T , IXTY5N50P , IXTY64N055T , IXTZ550N055T2 , IXUC160N075 , IXUV170N075 , IXUV170N075S , LKK47-06C5 , IRFP250 , FCH110N65F , FCP110N65F , MMIX1F520N075T2 , MMIX1T550N055T2 , MMIX1T600N04T2 , VBH40-05B , VHM40-06P1 , VKM40-06P1 .

Keywords - MKE11R600DCGFC MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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