All MOSFET. MKE11R600DCGFC Datasheet

 

MKE11R600DCGFC Datasheet and Replacement


   Type Designator: MKE11R600DCGFC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 40 nC
   tr ⓘ - Rise Time: 390 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: I4PAC
 

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MKE11R600DCGFC Datasheet (PDF)

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MKE11R600DCGFC

MKE 11R600DCGFCID25 = 15 ACoolMOS 1) Power MOSFETVDSS = 600 Vwith SiC DiodeRDS(on) max = 0.165 Boost topology3ISOPLUS i4Electrically isolated back surfaceSiC2500 V electrical isolation D411isolated backE72873 5surfaceT2FeaturesMOSFET T Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratingssubstrate VDSS TVJ = 25C 6

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: AP9T18GJ | STV36N06

Keywords - MKE11R600DCGFC MOSFET datasheet

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