All MOSFET. VMM650-01F Datasheet

 

VMM650-01F Datasheet and Replacement


   Type Designator: VMM650-01F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 680 A
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: Y3LI
 

 VMM650-01F substitution

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VMM650-01F Datasheet (PDF)

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VMM650-01F

VMM 650-01FVDSS = 100 VDual PowerID25 = 680 AHiPerFETTM ModuleRDS(on) = 1.8 mPhaseleg Configuration3Preliminary Data8911110 267NTCFeatures MOSFET T1 + T2 HiPerFET TM technologySymbol Conditions Maximum Ratings low RDSonVDSS TVJ = 25C to 150C 100 V unclamped inductive switching (UIS)capabilityVGS 20 V dv/

Datasheet: VHM40-06P1 , VKM40-06P1 , VKM60-01P1 , VMK165-007T , VMK90-02T2 , VMM1500-0075X2 , VMM300-03F , VMM45-02F , 8N60 , VMM85-02F , VMM90-09F , VMO1200-01F , VMO1600-02P , VMO550-01F , VMO580-02F , VMO60-05F , VMO650-01F .

History: RF1S30P06SM

Keywords - VMM650-01F MOSFET datasheet

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