VMM650-01F Specs and Replacement

Type Designator: VMM650-01F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 680 A

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: Y3LI

VMM650-01F substitution

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VMM650-01F datasheet

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VMM650-01F

VMM 650-01F VDSS = 100 V Dual Power ID25 = 680 A HiPerFETTM Module RDS(on) = 1.8 m Phaseleg Configuration 3 Preliminary Data 8 9 1 11 10 2 6 7 NTC Features MOSFET T1 + T2 HiPerFET TM technology Symbol Conditions Maximum Ratings low RDSon VDSS TVJ = 25 C to 150 C 100 V unclamped inductive switching (UIS) capability VGS 20 V dv/... See More ⇒

Detailed specifications: VHM40-06P1, VKM40-06P1, VKM60-01P1, VMK165-007T, VMK90-02T2, VMM1500-0075X2, VMM300-03F, VMM45-02F, 8N60, VMM85-02F, VMM90-09F, VMO1200-01F, VMO1600-02P, VMO550-01F, VMO580-02F, VMO60-05F, VMO650-01F

Keywords - VMM650-01F MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.