All MOSFET. VMM85-02F Datasheet

 

VMM85-02F MOSFET. Datasheet pdf. Equivalent


   Type Designator: VMM85-02F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 84 A
   Qgⓘ - Total Gate Charge: 380 nC
   trⓘ - Rise Time: 100 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: Y4M5

 VMM85-02F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VMM85-02F Datasheet (PDF)

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 vmm85-02f.pdf

VMM85-02F VMM85-02F

VDSS = 200 V VMM 85-02FDual PowerID25 = 84 AHiPerFETTM ModuleRDS(on) = 25 mWPhaseleg ConfigurationHigh dv/dt, Low trr, HDMOSTM Family11310329188911110 1 = Drain 1, Source 22 2 = Source 1 3 = Drain 2 8 = Gate 2 9 = Kelvin Source 210 = Kelvin Source 1 11 = Gate 1Symbol Conditions Maximum Ratings FeaturesVDSS TJ = 25C to 150C 200 V Two

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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