All MOSFET. VMM90-09F Datasheet

 

VMM90-09F Datasheet and Replacement


   Type Designator: VMM90-09F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   tr ⓘ - Rise Time: 140 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: Y3LI
 

 VMM90-09F substitution

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VMM90-09F Datasheet (PDF)

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VMM90-09F

VMM 90-09FVDSS = 900 VDual PowerID25 = 85 AHiPerFETTM ModuleRDS(on) = 76 mPhaseleg Configuration38911110 267NTCFeatures MOSFET T1 + T2 HiPerFET TM technologySymbol Conditions Maximum Ratings low RDSon unclamped inductive switching (UIS)VDSS TVJ = 25C to 150C 900 Vcapability dv/dt ruggednessVGS 20 V fa

Datasheet: VKM60-01P1 , VMK165-007T , VMK90-02T2 , VMM1500-0075X2 , VMM300-03F , VMM45-02F , VMM650-01F , VMM85-02F , IRF520 , VMO1200-01F , VMO1600-02P , VMO550-01F , VMO580-02F , VMO60-05F , VMO650-01F , VWM270-0075X2 , 2N7002BK .

History: IRFD110

Keywords - VMM90-09F MOSFET datasheet

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