All MOSFET. VMM90-09F Datasheet

 

VMM90-09F Datasheet and Replacement


   Type Designator: VMM90-09F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   trⓘ - Rise Time: 140 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: Y3LI
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VMM90-09F Datasheet (PDF)

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VMM90-09F

VMM 90-09FVDSS = 900 VDual PowerID25 = 85 AHiPerFETTM ModuleRDS(on) = 76 mPhaseleg Configuration38911110 267NTCFeatures MOSFET T1 + T2 HiPerFET TM technologySymbol Conditions Maximum Ratings low RDSon unclamped inductive switching (UIS)VDSS TVJ = 25C to 150C 900 Vcapability dv/dt ruggednessVGS 20 V fa

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History: BUZ94 | SSW65R190S2 | SM4186T9RL | SRT10N160LD | APT10021JFLL | NCE30P12BS | NP180N04TUJ

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