All MOSFET. VMM90-09F Datasheet

 

VMM90-09F MOSFET. Datasheet pdf. Equivalent


   Type Designator: VMM90-09F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Qgⓘ - Total Gate Charge: 960 nC
   trⓘ - Rise Time: 140 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: Y3LI

 VMM90-09F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VMM90-09F Datasheet (PDF)

 ..1. Size:125K  ixys
 vmm90-09f.pdf

VMM90-09F VMM90-09F

VMM 90-09FVDSS = 900 VDual PowerID25 = 85 AHiPerFETTM ModuleRDS(on) = 76 mPhaseleg Configuration38911110 267NTCFeatures MOSFET T1 + T2 HiPerFET TM technologySymbol Conditions Maximum Ratings low RDSon unclamped inductive switching (UIS)VDSS TVJ = 25C to 150C 900 Vcapability dv/dt ruggednessVGS 20 V fa

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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