VMM90-09F Specs and Replacement
Type Designator: VMM90-09F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1000 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Id| ⓘ - Maximum Drain Current: 85 A
Electrical Characteristics
tr ⓘ - Rise Time: 140 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: Y3LI
VMM90-09F substitution
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VMM90-09F datasheet
vmm90-09f.pdf
VMM 90-09F VDSS = 900 V Dual Power ID25 = 85 A HiPerFETTM Module RDS(on) = 76 m Phaseleg Configuration 3 8 9 1 11 10 2 6 7 NTC Features MOSFET T1 + T2 HiPerFET TM technology Symbol Conditions Maximum Ratings low RDSon unclamped inductive switching (UIS) VDSS TVJ = 25 C to 150 C 900 V capability dv/dt ruggedness VGS 20 V fa... See More ⇒
Detailed specifications: VKM60-01P1 , VMK165-007T , VMK90-02T2 , VMM1500-0075X2 , VMM300-03F , VMM45-02F , VMM650-01F , VMM85-02F , 75N75 , VMO1200-01F , VMO1600-02P , VMO550-01F , VMO580-02F , VMO60-05F , VMO650-01F , VWM270-0075X2 , 2N7002BK .
Keywords - VMM90-09F MOSFET specs
VMM90-09F cross reference
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VMM90-09F substitution
VMM90-09F replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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