VMM90-09F MOSFET. Datasheet pdf. Equivalent
Type Designator: VMM90-09F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1000 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Drain Current |Id|: 85 A
Total Gate Charge (Qg): 960 nC
Rise Time (tr): 140 nS
Maximum Drain-Source On-State Resistance (Rds): 0.076 Ohm
Package: Y3Li
VMM90-09F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VMM90-09F Datasheet (PDF)
1.1. vmm90-09f.pdf 
Size:125K _ixys
VMM 90-09F VDSS = 900 V Dual Power ID25 = 85 A HiPerFETTM Module Ω RDS(on) = 76 mΩ Ω Ω Ω Phaseleg Configuration 3 8 9 1 11 10 2 6 7 NTC Features MOSFET T1 + T2 • HiPerFET TM technology Symbol Conditions Maximum Ratings – low RDSon – unclamped inductive switching (UIS) VDSS TVJ = 25°C to 150°C 900 V capability – dv/dt ruggedness VGS ±20 V – fa
Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .
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