VMM90-09F PDF and Equivalents Search

 

VMM90-09F Specs and Replacement


   Type Designator: VMM90-09F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Id| ⓘ - Maximum Drain Current: 85 A

Electrical Characteristics


   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   Qg ⓘ - Total Gate Charge: 960 nC
   tr ⓘ - Rise Time: 140 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: Y3LI
 

 VMM90-09F substitution

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VMM90-09F datasheet

 ..1. Size:125K  ixys
 vmm90-09f.pdf pdf_icon

VMM90-09F

VMM 90-09F VDSS = 900 V Dual Power ID25 = 85 A HiPerFETTM Module RDS(on) = 76 m Phaseleg Configuration 3 8 9 1 11 10 2 6 7 NTC Features MOSFET T1 + T2 HiPerFET TM technology Symbol Conditions Maximum Ratings low RDSon unclamped inductive switching (UIS) VDSS TVJ = 25 C to 150 C 900 V capability dv/dt ruggedness VGS 20 V fa... See More ⇒

Detailed specifications: VKM60-01P1 , VMK165-007T , VMK90-02T2 , VMM1500-0075X2 , VMM300-03F , VMM45-02F , VMM650-01F , VMM85-02F , 75N75 , VMO1200-01F , VMO1600-02P , VMO550-01F , VMO580-02F , VMO60-05F , VMO650-01F , VWM270-0075X2 , 2N7002BK .

Keywords - VMM90-09F MOSFET specs

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