VMO1200-01F Specs and Replacement

Type Designator: VMO1200-01F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1220 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1020 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm

Package: Y3LI

VMO1200-01F substitution

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VMO1200-01F datasheet

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VMO1200-01F

VMO 1200-01F VDSS = 100 V PolarHT Module ID25 = 1220 A N-Channel Enhancement Mode RDS(on) = 1.25 m max. D D S G KS KS S G Features MOSFET PolarHT MOSFET technology Symbol Conditions Maximum Ratings - low RDSon VDSS TVJ = 25 C to 150 C 100 V - dv/dt ruggedness VGS 20 V - fast intrinsic reverse diode package ID25 TC = 25 C 1220 A - low inductive cu... See More ⇒

Detailed specifications: VMK165-007T, VMK90-02T2, VMM1500-0075X2, VMM300-03F, VMM45-02F, VMM650-01F, VMM85-02F, VMM90-09F, AO3400A, VMO1600-02P, VMO550-01F, VMO580-02F, VMO60-05F, VMO650-01F, VWM270-0075X2, 2N7002BK, 2N7002BKM

Keywords - VMO1200-01F MOSFET specs

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