All MOSFET. VMO1200-01F Datasheet

 

VMO1200-01F Datasheet and Replacement


   Type Designator: VMO1200-01F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1220 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1020 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm
   Package: Y3LI
 

 VMO1200-01F substitution

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VMO1200-01F Datasheet (PDF)

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VMO1200-01F

VMO 1200-01FVDSS = 100 VPolarHT ModuleID25 = 1220 AN-Channel Enhancement Mode RDS(on) = 1.25 m max.DDSGKSKSSGFeaturesMOSFET PolarHT MOSFET technologySymbol Conditions Maximum Ratings- low RDSonVDSS TVJ = 25C to 150C 100 V- dv/dt ruggednessVGS 20 V- fast intrinsic reverse diode package ID25 TC = 25C 1220 A - low inductive cu

Datasheet: VMK165-007T , VMK90-02T2 , VMM1500-0075X2 , VMM300-03F , VMM45-02F , VMM650-01F , VMM85-02F , VMM90-09F , P60NF06 , VMO1600-02P , VMO550-01F , VMO580-02F , VMO60-05F , VMO650-01F , VWM270-0075X2 , 2N7002BK , 2N7002BKM .

History: IPD65R190C7 | IXTH12N100Q | DACMH200N1200 | IXTH12N120 | IXTN200N10T | IXTN120N25 | IXTN200N10L2

Keywords - VMO1200-01F MOSFET datasheet

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