VMO1600-02P MOSFET. Datasheet pdf. Equivalent

   Type Designator: VMO1600-02P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 1600 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2900 nC
   trⓘ - Rise Time: 700 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: Y3LI

VMO1600-02P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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