All MOSFET. VMO1600-02P Datasheet

 

VMO1600-02P Datasheet and Replacement


   Type Designator: VMO1600-02P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1600 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 700 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: Y3LI
 

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VMO1600-02P Datasheet (PDF)

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VMO1600-02P

VMO 1600-02P VDSS = 200 VPolarHTTM ModuleID80 = 1600 AN-Channel Enhancement ModeRDS(on) = 1.7 mW max.DDSGKSKSGSFeaturesMOSFET PolarHTTM technologySymbol Conditions Maximum Ratings- low RDSonVDSS TVJ = 25C to 150C 200 V - dv/dt ruggedness- fast intrinsic reverse diodeVGS 20 V Package - low inductive current pathID25 TC = 25C 1900 A

Datasheet: VMK90-02T2 , VMM1500-0075X2 , VMM300-03F , VMM45-02F , VMM650-01F , VMM85-02F , VMM90-09F , VMO1200-01F , IRF730 , VMO550-01F , VMO580-02F , VMO60-05F , VMO650-01F , VWM270-0075X2 , 2N7002BK , 2N7002BKM , 2N7002BKS .

History: HGI090NE6AL | IXFX170N20P | FMP10N60E | UTT6NP10G-S08-R | SIA537EDJ | SI7625DN | QM2N7002E3K1

Keywords - VMO1600-02P MOSFET datasheet

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