VMO1600-02P Datasheet. Specs and Replacement

Type Designator: VMO1600-02P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1600 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 700 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: Y3LI

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VMO1600-02P datasheet

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VMO1600-02P

VMO 1600-02P VDSS = 200 V PolarHTTM Module ID80 = 1600 A N-Channel Enhancement Mode RDS(on) = 1.7 mW max. D D S G KS KS G S Features MOSFET PolarHTTM technology Symbol Conditions Maximum Ratings - low RDSon VDSS TVJ = 25 C to 150 C 200 V - dv/dt ruggedness - fast intrinsic reverse diode VGS 20 V Package - low inductive current path ID25 TC = 25 C 1900 A... See More ⇒

Detailed specifications: VMK90-02T2, VMM1500-0075X2, VMM300-03F, VMM45-02F, VMM650-01F, VMM85-02F, VMM90-09F, VMO1200-01F, IRFZ46N, VMO550-01F, VMO580-02F, VMO60-05F, VMO650-01F, VWM270-0075X2, 2N7002BK, 2N7002BKM, 2N7002BKS

Keywords - VMO1600-02P MOSFET specs

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