VMO550-01F Specs and Replacement

Type Designator: VMO550-01F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 590 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: Y3DCB

VMO550-01F substitution

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VMO550-01F datasheet

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VMO550-01F

VMO 550-01F VDSS = 100 V HiPerFETTM ID25 = 590 A MOSFET Module RDS(on) = 2.1 mW D N-Channel Enhancement Mode G E 72873 G Preliminary Data S KS KS S D Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 10 kW 100 V VGS Continuous 20 V D = Drain S = Source VGSM Transient 30 V KS = Kelvin Source G = Gate ID25 TS = 25 C 5... See More ⇒

Detailed specifications: VMM1500-0075X2, VMM300-03F, VMM45-02F, VMM650-01F, VMM85-02F, VMM90-09F, VMO1200-01F, VMO1600-02P, STP65NF06, VMO580-02F, VMO60-05F, VMO650-01F, VWM270-0075X2, 2N7002BK, 2N7002BKM, 2N7002BKS, 2N7002BKT

Keywords - VMO550-01F MOSFET specs

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