All MOSFET. VMO550-01F Datasheet

 

VMO550-01F MOSFET. Datasheet pdf. Equivalent


   Type Designator: VMO550-01F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6 V
   |Id|ⓘ - Maximum Drain Current: 590 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2000 nC
   trⓘ - Rise Time: 200 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: Y3DCB

 VMO550-01F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VMO550-01F Datasheet (PDF)

 ..1. Size:46K  ixys
 vmo550-01f.pdf

VMO550-01F VMO550-01F

VMO 550-01F VDSS = 100 VHiPerFETTMID25 = 590 AMOSFET ModuleRDS(on) = 2.1 mWDN-Channel Enhancement ModeGE 72873GPreliminary DataS KSKSS DSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 10 kW 100 VVGS Continuous 20 VD = Drain S = SourceVGSM Transient 30 VKS = Kelvin Source G = GateID25 TS = 25C 5

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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