All MOSFET. VMO580-02F Datasheet

 

 

VMO580-02F Datasheet and Replacement


   Type Designator: VMO580-02F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 580 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 350 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: Y3LI
 

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VMO580-02F Datasheet (PDF)

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VMO580-02F

VDSS = 200 VVMO 580-02FHipPerFETTM ModuleID25 = 580 ARDS(on) = 3.8 mN-Channel Enhancement ModeDGSKSDGKSSPreliminary DataFeatures MOSFET HiPerFETTM technologySymbol Conditions Maximum Ratings- low RDSonVDSS TVJ = 25C to 150C 200 V - dv/dt ruggedness- fast intrinsic reverse diodeVGS 20 V package- low inductive curr

Datasheet: VMM300-03F , VMM45-02F , VMM650-01F , VMM85-02F , VMM90-09F , VMO1200-01F , VMO1600-02P , VMO550-01F , IRF1405 , VMO60-05F , VMO650-01F , VWM270-0075X2 , 2N7002BK , 2N7002BKM , 2N7002BKS , 2N7002BKT , 2N7002BKV .

History: 2SJ226

Keywords - VMO580-02F MOSFET datasheet

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