VMO580-02F Specs and Replacement

Type Designator: VMO580-02F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 580 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 350 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: Y3LI

VMO580-02F substitution

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VMO580-02F datasheet

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VMO580-02F

VDSS = 200 V VMO 580-02F HipPerFETTM Module ID25 = 580 A RDS(on) = 3.8 m N-Channel Enhancement Mode D G S KS D G KS S Preliminary Data Features MOSFET HiPerFETTM technology Symbol Conditions Maximum Ratings - low RDSon VDSS TVJ = 25 C to 150 C 200 V - dv/dt ruggedness - fast intrinsic reverse diode VGS 20 V package - low inductive curr... See More ⇒

Detailed specifications: VMM300-03F, VMM45-02F, VMM650-01F, VMM85-02F, VMM90-09F, VMO1200-01F, VMO1600-02P, VMO550-01F, IRF1405, VMO60-05F, VMO650-01F, VWM270-0075X2, 2N7002BK, 2N7002BKM, 2N7002BKS, 2N7002BKT, 2N7002BKV

Keywords - VMO580-02F MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs