VMO60-05F Specs and Replacement

Type Designator: VMO60-05F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 590 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO240AA

VMO60-05F substitution

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VMO60-05F datasheet

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VMO60-05F

VDSS = 500 V VMO 60-05F HiPerFETTM ID25 = 60 A Power Module RDS(on) = 65 mW High dv/dt, Low trr, HDMOSTM Family 1 3 TO-240 AA 6 1 5 Preliminary Data 5 6 3 1 = Drain 3 = Source 5 = Gate 6 = Kelvin Source Symbol Conditions Maximum Ratings Features VDSS TJ = 25 C to 150 C 500 V International standard package VDGR TJ = 25 C to 150 C; RGS = 10 kW 500 V Direct copper... See More ⇒

Detailed specifications: VMM45-02F, VMM650-01F, VMM85-02F, VMM90-09F, VMO1200-01F, VMO1600-02P, VMO550-01F, VMO580-02F, 7N60, VMO650-01F, VWM270-0075X2, 2N7002BK, 2N7002BKM, 2N7002BKS, 2N7002BKT, 2N7002BKV, 2N7002BKW

Keywords - VMO60-05F MOSFET specs

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