All MOSFET. VMO60-05F Datasheet

 

VMO60-05F MOSFET. Datasheet pdf. Equivalent


   Type Designator: VMO60-05F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 590 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 405 nC
   trⓘ - Rise Time: 30 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO240AA

 VMO60-05F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VMO60-05F Datasheet (PDF)

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 vmo60-05f.pdf

VMO60-05F VMO60-05F

VDSS = 500 VVMO 60-05FHiPerFETTMID25 = 60 APower ModuleRDS(on) = 65 mWHigh dv/dt, Low trr, HDMOSTM Family13TO-240 AA615Preliminary Data 5631 = Drain 3 = Source5 = Gate 6 = Kelvin SourceSymbol Conditions Maximum Ratings FeaturesVDSS TJ = 25C to 150C 500 V International standard packageVDGR TJ = 25C to 150C; RGS = 10 kW 500 V Direct copper

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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