All MOSFET. VMO650-01F Datasheet

 

VMO650-01F Datasheet and Replacement


   Type Designator: VMO650-01F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1740 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 690 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: Y3DCB
 

 VMO650-01F substitution

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VMO650-01F Datasheet (PDF)

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VMO650-01F

VMO 650-01F VDSS = 100 VHiPerFETTMID25 = 690 AMOSFET ModuleRDS(on) = 1.8 mWDN-Channel Enhancement ModeGE 72873Preliminary Data GKSS KSSDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 10 kW 100 VVGS Continuous 20 VD = Drain S = SourceVGSM Transient 30 VKS = Kelvin Source G = GateID25 TS = 25C 6

Datasheet: VMM650-01F , VMM85-02F , VMM90-09F , VMO1200-01F , VMO1600-02P , VMO550-01F , VMO580-02F , VMO60-05F , 60N06 , VWM270-0075X2 , 2N7002BK , 2N7002BKM , 2N7002BKS , 2N7002BKT , 2N7002BKV , 2N7002BKW , 2N7002CK .

History: CEB75N10 | NP80N055KLE

Keywords - VMO650-01F MOSFET datasheet

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