VMO650-01F Specs and Replacement

Type Designator: VMO650-01F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1740 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 690 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: Y3DCB

VMO650-01F substitution

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VMO650-01F datasheet

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VMO650-01F

VMO 650-01F VDSS = 100 V HiPerFETTM ID25 = 690 A MOSFET Module RDS(on) = 1.8 mW D N-Channel Enhancement Mode G E 72873 Preliminary Data G KS S KS S D Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 10 kW 100 V VGS Continuous 20 V D = Drain S = Source VGSM Transient 30 V KS = Kelvin Source G = Gate ID25 TS = 25 C 6... See More ⇒

Detailed specifications: VMM650-01F, VMM85-02F, VMM90-09F, VMO1200-01F, VMO1600-02P, VMO550-01F, VMO580-02F, VMO60-05F, IRFZ48N, VWM270-0075X2, 2N7002BK, 2N7002BKM, 2N7002BKS, 2N7002BKT, 2N7002BKV, 2N7002BKW, 2N7002CK

Keywords - VMO650-01F MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.