BLD6G22L-50
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLD6G22L-50
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 55
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 10.2
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.736
Ohm
Package: SOT1130A
BLD6G22L-50
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLD6G22L-50
Datasheet (PDF)
..1. Size:363K philips
bld6g22l-50 bld6g22ls-50.pdf 
BLD6G22L-50; BLD6G22LS-50W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistorRev. 3 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequ
8.1. Size:378K philips
bld6g21l-50 bld6g21ls-50.pdf
BLD6G21L-50; BLD6G21LS-50TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistorRev. 2 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications
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