BLD6G22L-50 PDF and Equivalents Search

 

BLD6G22L-50 PDF Specs and Replacement


   Type Designator: BLD6G22L-50
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id| ⓘ - Maximum Drain Current: 10.2 A

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.736 Ohm
   Package: SOT1130A
 

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BLD6G22L-50 PDF Specs

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BLD6G22L-50

BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequ... See More ⇒

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BLD6G22L-50

BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications ... See More ⇒

Detailed specifications: BLA1011-300 , BLA1011S-200 , BLA1011S-200R , BLA6G1011-200R , BLA6H0912-500 , BLA6H1011-600 , BLD6G21L-50 , BLD6G21LS-50 , 5N65 , BLD6G22LS-50 , BLF1043 , BLF1046 , BLF145 , BLF147 , BLF175 , BLF177 , BLF178P .

Keywords - BLD6G22L-50 MOSFET specs

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