All MOSFET. BLD6G22LS-50 Datasheet

 

BLD6G22LS-50 Datasheet and Replacement


   Type Designator: BLD6G22LS-50
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id| ⓘ - Maximum Drain Current: 10.2 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.736 Ohm
   Package: SOT1130B
 

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BLD6G22LS-50 Datasheet (PDF)

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BLD6G22LS-50

BLD6G22L-50; BLD6G22LS-50W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistorRev. 3 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequ

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BLD6G22LS-50

BLD6G21L-50; BLD6G21LS-50TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistorRev. 2 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications

Datasheet: BLA1011S-200 , BLA1011S-200R , BLA6G1011-200R , BLA6H0912-500 , BLA6H1011-600 , BLD6G21L-50 , BLD6G21LS-50 , BLD6G22L-50 , IRF530 , BLF1043 , BLF1046 , BLF145 , BLF147 , BLF175 , BLF177 , BLF178P , BLF202 .

History: IRFP4110PBF | SE60P20B

Keywords - BLD6G22LS-50 MOSFET datasheet

 BLD6G22LS-50 cross reference
 BLD6G22LS-50 equivalent finder
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 BLD6G22LS-50 replacement

 

 
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