BLF368 Datasheet and Replacement
Type Designator: BLF368
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
|Id| ⓘ - Maximum Drain Current: 25 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT262A1
BLF368 substitution
BLF368 Datasheet (PDF)
blf368.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF368VHF push-pull power MOStransistor1998 Jul 29Product specificationSupersedes data of September 1992Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF368FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2ndbook, halfpage Gold metalliza
blf368 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF368VHF push-pull power MOStransistorProduct specification 2003 Sep 26Supersedes data of 1998 Jul 29Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF368FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2ndbook, halfpage Gold metallization
blf369.pdf

BLF369Multi-use VHF power LDMOS transistorRev. 04 19 February 2009 Product data sheet1. Product profile1.1 General descriptionA general purpose 500 W LDMOS RF power transistor for pulsed and continuous waveapplications in the HF/VHF band up to 500 MHz.Table 1. Typical performanceTypical RF performance at VDS = 32 V and Th =25 C in a common-source 225 MHz test circuit.[1]
Datasheet: BLF244 , BLF245 , BLF245B , BLF246 , BLF246B , BLF248 , BLF278 , BLF346 , RU6888R , BLF369 , BLF3G21-30 , BLF3G21-6 , BLF404 , BLF521 , BLF542 , BLF544 , BLF546 .
History: FQB4P40TM | STP55N05LFI | FQB6N25TM | H2N60D | IXFN44N50U3 | VBH40-05B | IRF1010ZL
Keywords - BLF368 MOSFET datasheet
BLF368 cross reference
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History: FQB4P40TM | STP55N05LFI | FQB6N25TM | H2N60D | IXFN44N50U3 | VBH40-05B | IRF1010ZL



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