BLF368 Specs and Replacement
Type Designator: BLF368
Type of Transistor: LDMOS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
|Id| ⓘ - Maximum Drain Current: 25 A
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT262A1
BLF368 substitution
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BLF368 datasheet
blf368.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF368 VHF push-pull power MOS transistor 1998 Jul 29 Product specification Supersedes data of September 1992 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 FEATURES PIN CONFIGURATION High power gain Easy power control 1 2 Good thermal stability d2 ndbook, halfpage Gold metalliza... See More ⇒
blf368 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF368 VHF push-pull power MOS transistor Product specification 2003 Sep 26 Supersedes data of 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF368 FEATURES PIN CONFIGURATION High power gain Easy power control 1 2 Good thermal stability d2 ndbook, halfpage Gold metallization... See More ⇒
blf369.pdf
BLF369 Multi-use VHF power LDMOS transistor Rev. 04 19 February 2009 Product data sheet 1. Product profile 1.1 General description A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz. Table 1. Typical performance Typical RF performance at VDS = 32 V and Th =25 C in a common-source 225 MHz test circuit.[1] ... See More ⇒
Detailed specifications: BLF244 , BLF245 , BLF245B , BLF246 , BLF246B , BLF248 , BLF278 , BLF346 , 18N50 , BLF369 , BLF3G21-30 , BLF3G21-6 , BLF404 , BLF521 , BLF542 , BLF544 , BLF546 .
Keywords - BLF368 MOSFET specs
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