DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF368VHF push-pull power MOStransistor1998 Jul 29Product specificationSupersedes data of September 1992Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF368FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2ndbook, halfpage Gold metalliza

DISCRETE SEMICONDUCTORSDATA SHEETM3D091BLF368VHF push-pull power MOStransistorProduct specification 2003 Sep 26Supersedes data of 1998 Jul 29Philips Semiconductors Product specificationVHF push-pull power MOS transistor BLF368FEATURES PIN CONFIGURATION High power gain Easy power control1 2 Good thermal stabilityd2ndbook, halfpage Gold metallization

BLF369Multi-use VHF power LDMOS transistorRev. 04 19 February 2009 Product data sheet1. Product profile1.1 General descriptionA general purpose 500 W LDMOS RF power transistor for pulsed and continuous waveapplications in the HF/VHF band up to 500 MHz.Table 1. Typical performanceTypical RF performance at VDS = 32 V and Th =25 C in a common-source 225 MHz test circuit.[1]