All MOSFET. BLF8G10L-160 Datasheet

 

BLF8G10L-160 Datasheet and Replacement


   Type Designator: BLF8G10L-160
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: SOT502A
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BLF8G10L-160 Datasheet (PDF)

 ..1. Size:676K  nxp
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BLF8G10L-160

BLF8G10L-160; BLF8G10LS-160Power LDMOS transistorRev. 3 16 February 2012 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Test signal f IDq VDS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | DMP2104LP | DMN60H3D5SK3 | IRFBG20

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