All MOSFET. BLF8G10L-160 Datasheet

 

BLF8G10L-160 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLF8G10L-160
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: SOT502A

 BLF8G10L-160 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF8G10L-160 Datasheet (PDF)

 ..1. Size:676K  nxp
 blf8g10l-160 8g10ls-160.pdf

BLF8G10L-160 BLF8G10L-160

BLF8G10L-160; BLF8G10LS-160Power LDMOS transistorRev. 3 16 February 2012 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Test signal f IDq VDS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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