BLF8G10L-160 Specs and Replacement
Type Designator: BLF8G10L-160
Type of Transistor: LDMOS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 37 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
Package: SOT502A
BLF8G10L-160 substitution
- MOSFET ⓘ Cross-Reference Search
BLF8G10L-160 datasheet
blf8g10l-160 8g10ls-160.pdf
BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev. 3 16 February 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS... See More ⇒
Detailed specifications: BLF881S, BLF884P, BLF884PS, BLF888, BLF888A, BLF888AS, BLF888B, BLF888BS, IRF540, BLF8G10LS-160, BLL1214-250, BLL1214-250R, BLL1214-35, BLL6H0514-25, BLL6H0514L-130, BLL6H0514LS-130, BLL6H1214-500
Keywords - BLF8G10L-160 MOSFET specs
BLF8G10L-160 cross reference
BLF8G10L-160 equivalent finder
BLF8G10L-160 pdf lookup
BLF8G10L-160 substitution
BLF8G10L-160 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SML4065GN
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
2n5088 equivalent | d882 transistor | 2n3771 | s9018 | 2n3904 equivalent | ksa1220 | s9015 | mje3055t datasheet