All MOSFET. BLF8G10LS-160 Datasheet

 

BLF8G10LS-160 Datasheet and Replacement


   Type Designator: BLF8G10LS-160
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: SOT502B
 

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BLF8G10LS-160 Datasheet (PDF)

 6.1. Size:676K  nxp
 blf8g10l-160 8g10ls-160.pdf pdf_icon

BLF8G10LS-160

BLF8G10L-160; BLF8G10LS-160Power LDMOS transistorRev. 3 16 February 2012 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Test signal f IDq VDS

Datasheet: BLF884P , BLF884PS , BLF888 , BLF888A , BLF888AS , BLF888B , BLF888BS , BLF8G10L-160 , 50N06 , BLL1214-250 , BLL1214-250R , BLL1214-35 , BLL6H0514-25 , BLL6H0514L-130 , BLL6H0514LS-130 , BLL6H1214-500 , BLL6H1214L-250 .

History: UT100N03L-TQ2-T | AONR36368 | MCH6429 | 2SK3612-01S | 2SK4065B | BUK7Y4R8-60E

Keywords - BLF8G10LS-160 MOSFET datasheet

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