BLF8G10LS-160 PDF and Equivalents Search

 

BLF8G10LS-160 Specs and Replacement

Type Designator: BLF8G10LS-160

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 37 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm

Package: SOT502B

BLF8G10LS-160 substitution

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BLF8G10LS-160 datasheet

 6.1. Size:676K  nxp
 blf8g10l-160 8g10ls-160.pdf pdf_icon

BLF8G10LS-160

BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev. 3 16 February 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS... See More ⇒

Detailed specifications: BLF884P, BLF884PS, BLF888, BLF888A, BLF888AS, BLF888B, BLF888BS, BLF8G10L-160, 50N06, BLL1214-250, BLL1214-250R, BLL1214-35, BLL6H0514-25, BLL6H0514L-130, BLL6H0514LS-130, BLL6H1214-500, BLL6H1214L-250

Keywords - BLF8G10LS-160 MOSFET specs

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