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BLS2933-100 Specs and Replacement


   Type Designator: BLS2933-100
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 32 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT502A
 

 BLS2933-100 substitution

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BLS2933-100 Specs

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BLS2933-100

BLS2933-100 Microwave power LDMOS transistor Rev. 01 1 August 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. Table 1 Typical performance tp = 200 s; = 12 %; Tcase =25 C; in a class-AB production test circuit. Mode of operati... See More ⇒

Detailed specifications: BLL6H1214LS-250 , BLM6G10-30 , BLM6G10-30G , BLM6G22-30 , BLM6G22-30G , 2SK1745 , 2SK60 , 2SJ238 , 8205A , BLS6G2731-120 , BLS6G2731-6G , 2SJ559 , BLS6G2731S-120 , BLS6G2731S-130 , BLS6G2735L-30 , BLS6G2735LS-30 , BLS6G2933P-200 .

Keywords - BLS2933-100 MOSFET specs

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