BSH121 Datasheet and Replacement
Type Designator: BSH121
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SC70
BSH121 substitution
BSH121 Datasheet (PDF)
bsh121-01.pdf

BSH121N-channel enhancement mode field-effect transistorRev. 01 14 August 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH121 in SOT323.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.
bsh120t-01.pdf

BSH120TN-channel enhancement mode field-effect transistorRev. 01 06 September 2000 Product specificationM3D1861. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH120T in SOT54 (TO-92).2. Features TrenchMOS technology Low on-state resistance Very fast switching Logic level com
Datasheet: BLS7G3135L-350P , BLS7G3135LS-350P , 2SK3408 , BSH103 , BSH105 , BSH108 , BSH111 , BSH114 , STP80NF70 , BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 , BSP110 .
History: WMJ53N60C4 | SDF240 | RZL035P01TR | WMO15N65C2 | 3SK162 | SM2312NSA | HM12N20D
Keywords - BSH121 MOSFET datasheet
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History: WMJ53N60C4 | SDF240 | RZL035P01TR | WMO15N65C2 | 3SK162 | SM2312NSA | HM12N20D



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