All MOSFET. BSH121 Datasheet

 

BSH121 Datasheet and Replacement


   Type Designator: BSH121
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SC70
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BSH121 Datasheet (PDF)

 0.1. Size:297K  philips
 bsh121-01.pdf pdf_icon

BSH121

BSH121N-channel enhancement mode field-effect transistorRev. 01 14 August 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH121 in SOT323.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.

 9.1. Size:357K  philips
 bsh120t-01.pdf pdf_icon

BSH121

BSH120TN-channel enhancement mode field-effect transistorRev. 01 06 September 2000 Product specificationM3D1861. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH120T in SOT54 (TO-92).2. Features TrenchMOS technology Low on-state resistance Very fast switching Logic level com

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History: 20N03L-TO252 | 2N6762JTXV

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