All MOSFET. BSH121 Datasheet

 

BSH121 Datasheet and Replacement


   Type Designator: BSH121
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SC70
 

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BSH121 Datasheet (PDF)

 0.1. Size:297K  philips
 bsh121-01.pdf pdf_icon

BSH121

BSH121N-channel enhancement mode field-effect transistorRev. 01 14 August 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH121 in SOT323.2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.

 9.1. Size:357K  philips
 bsh120t-01.pdf pdf_icon

BSH121

BSH120TN-channel enhancement mode field-effect transistorRev. 01 06 September 2000 Product specificationM3D1861. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSH120T in SOT54 (TO-92).2. Features TrenchMOS technology Low on-state resistance Very fast switching Logic level com

Datasheet: BLS7G3135L-350P , BLS7G3135LS-350P , 2SK3408 , BSH103 , BSH105 , BSH108 , BSH111 , BSH114 , AO4407 , BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 , BSP110 .

History: TPC8134 | BUK9C10-55BIT | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

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