BSH121 MOSFET Datasheet: N-Ch, 55V, 0.3A. Full specification with pinout and replacement list

BSH121 Specs and Replacement

Type Designator: BSH121

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: SC70

BSH121 substitution

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BSH121 datasheet

0.1. Size:297K philips
bsh121-01.pdf pdf_icon

BSH121 N-channel enhancement mode field-effect transistor Rev. 01 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH121 in SOT323. 2. Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. ... See More ⇒

9.1. Size:357K philips
bsh120t-01.pdf pdf_icon

BSH120T N-channel enhancement mode field-effect transistor Rev. 01 06 September 2000 Product specification M3D186 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSH120T in SOT54 (TO-92). 2. Features TrenchMOS technology Low on-state resistance Very fast switching Logic level com... See More ⇒

Detailed specifications: BLS7G3135L-350P, BLS7G3135LS-350P, 2SK3408, BSH103, BSH105, BSH108, BSH111, BSH114, IRF530, BSH201, BSH202, BSH203, BSH205, BSH207, BSP030, BSP100, BSP110