BSP100 MOSFET Datasheet: N-Ch, 30V, 6A. Full specification with pinout and replacement list

BSP100 Specs and Replacement

Type Designator: BSP100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 8.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SC73

BSP100 substitution

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BSP100 datasheet

..1. Size:88K philips
bsp100 3.pdf pdf_icon

Philips Semiconductors Product specification N-channel enhancement mode BSP100 TrenchMOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Low on-state resistance Fast switching ID = 6 A High thermal cycling performance Low thermal resistance RDS(ON) 100 m (VGS = 10 V) g RDS(ON) 200 m (VGS = 4.5 V) s GENERAL... See More ⇒

..2. Size:111K philips
bsp100.pdf pdf_icon

9.1. Size:64K philips
bsp108.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BSP108 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP108 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 80 V vertical D-... See More ⇒

9.2. Size:65K philips
bsp107.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BSP107 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP107 D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. due to l... See More ⇒