BSP100 - аналоги, параметры транзистора - Справочник транзисторов

BSP100 даташит

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Philips Semiconductors Product specification N-channel enhancement mode BSP100 TrenchMOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Low on-state resistance Fast switching ID = 6 A High thermal cycling performance Low thermal resistance RDS(ON) 100 m (VGS = 10 V) g RDS(ON) 200 m (VGS = 4.5 V) s GENERAL

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DISCRETE SEMICONDUCTORS DATA SHEET BSP108 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP108 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 80 V vertical D-

9.2. Size:65K philips
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DISCRETE SEMICONDUCTORS DATA SHEET BSP107 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP107 D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. due to l