Справочник MOSFET. BSP100

 

BSP100 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSP100
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 8.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SC73

 Аналог (замена) для BSP100

 

 

BSP100 Datasheet (PDF)

 ..1. Size:88K  philips
 bsp100 3.pdf

BSP100 BSP100

Philips Semiconductors Product specification N-channel enhancement mode BSP100 TrenchMOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Low on-state resistance Fast switching ID = 6 A High thermal cycling performance Low thermal resistance RDS(ON) 100 m (VGS = 10 V)gRDS(ON) 200 m (VGS = 4.5 V)sGENERAL

 ..2. Size:111K  philips
 bsp100.pdf

BSP100 BSP100

Philips Semiconductors Product specification N-channel enhancement mode BSP100 TrenchMOS transistorFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Low on-state resistance Fast switching ID = 6 A High thermal cycling performance Low thermal resistance RDS(ON) 100 m (VGS = 10 V)gRDS(ON) 200 m (VGS = 4.5 V)sGENERAL

 9.1. Size:64K  philips
 bsp108.pdf

BSP100 BSP100

DISCRETE SEMICONDUCTORSDATA SHEETBSP108N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP108D-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 80 Vvertical D-

 9.2. Size:65K  philips
 bsp107.pdf

BSP100 BSP100

DISCRETE SEMICONDUCTORSDATA SHEETBSP107N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP107D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc. due to l

 9.3. Size:65K  philips
 bsp106.pdf

BSP100 BSP100

DISCRETE SEMICONDUCTORSDATA SHEETBSP106N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP106D-MOS transistorFEATURES QUICK REFERENCE DATA Very low RDS(on)SYMBOL PARAMETER CONDITIONS MAX. UNIT Direct interf

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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