All MOSFET. BSP110 Datasheet

 

BSP110 Datasheet and Replacement


   Type Designator: BSP110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SOT223
 

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BSP110 Datasheet (PDF)

 ..1. Size:271K  philips
 bsp110.pdf pdf_icon

BSP110

BSP110N-channel enhancement mode field-effect transistorRev. 03 26 July 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSP110 in SOT223.2. Features TrenchMOS technology Very fast switching Logic level compatible Surface mount package.3. Application

 ..2. Size:813K  cn vbsemi
 bsp110.pdf pdf_icon

BSP110

BSP110www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET ABSOL

Datasheet: BSH121 , BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 , 18N50 , BSP122 , BSP126 , BSP130 , BSP220 , BSP225 , BSP230 , BSP250 , BSP89 .

History: MTP1406M3 | IRFI540G | PK5A1BA | AP9576GM-HF | APS04N60H | IXFR12N100F

Keywords - BSP110 MOSFET datasheet

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