BSP110 MOSFET Datasheet: N-Ch, 100V, 0.52A. Full specification with pinout and replacement list

BSP110 Specs and Replacement

Type Designator: BSP110

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm

Package: SOT223

BSP110 substitution

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BSP110 datasheet

..1. Size:271K philips
bsp110.pdf pdf_icon

BSP110 N-channel enhancement mode field-effect transistor Rev. 03 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSP110 in SOT223. 2. Features TrenchMOS technology Very fast switching Logic level compatible Surface mount package. 3. Application... See More ⇒

..2. Size:813K cn vbsemi
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BSP110 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET ABSOL... See More ⇒

Detailed specifications: BSH121, BSH201, BSH202, BSH203, BSH205, BSH207, BSP030, BSP100, BS170, BSP122, BSP126, BSP130, BSP220, BSP225, BSP230, BSP250, BSP89