BSP110 Datasheet and Replacement
Type Designator: BSP110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: SOT223
BSP110 substitution
BSP110 Datasheet (PDF)
bsp110.pdf
BSP110N-channel enhancement mode field-effect transistorRev. 03 26 July 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSP110 in SOT223.2. Features TrenchMOS technology Very fast switching Logic level compatible Surface mount package.3. Application
bsp110.pdf
BSP110www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET ABSOL
Datasheet: BSH121 , BSH201 , BSH202 , BSH203 , BSH205 , BSH207 , BSP030 , BSP100 , BS170 , BSP122 , BSP126 , BSP130 , BSP220 , BSP225 , BSP230 , BSP250 , BSP89 .
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