BST82 Datasheet and Replacement
Type Designator: BST82
Marking Code: 2_O2_O2p
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 0.19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: TO236AB
BST82 substitution
BST82 Datasheet (PDF)
bst82.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bst82-03.pdf

BST82N-channel enhancement mode field-effect transistorRev. 03 26 July 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BST82 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.3. A
Datasheet: BSS83 , BSS84AK , BSS84AKM , BSS84AKS , BSS84AKT , BSS84AKV , BSS84AKW , BSS87 , NCEP15T14 , BUK6207-55C , BUK6209-30C , BUK6210-55C , BUK6211-75C , BUK6212-40C , BUK6213-30A , BUK6213-30C , BUK6215-75C .
Keywords - BST82 MOSFET datasheet
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