All MOSFET. BST82 Datasheet

 

BST82 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BST82
   Marking Code: 2_O2_O2p
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: TO236AB

 BST82 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BST82 Datasheet (PDF)

 ..1. Size:367K  nxp
 bst82.pdf

BST82 BST82

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.1. Size:269K  philips
 bst82-03.pdf

BST82 BST82

BST82N-channel enhancement mode field-effect transistorRev. 03 26 July 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BST82 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.3. A

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