All MOSFET. BUK7614-55A Datasheet

 

BUK7614-55A Datasheet and Replacement


   Type Designator: BUK7614-55A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 73 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: D2PAK
 

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BUK7614-55A Datasheet (PDF)

 ..1. Size:68K  philips
buk7514-55a buk7614-55a.pdf pdf_icon

BUK7614-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 73 AUsing trench tec

 4.1. Size:52K  philips
buk7614-55.pdf pdf_icon

BUK7614-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 68 Atrench technology the devi

 4.2. Size:55K  philips
buk7614-55 1.pdf pdf_icon

BUK7614-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 68 Atrench technology the devi

 6.1. Size:53K  philips
buk7614-30 1.pdf pdf_icon

BUK7614-55A

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 69 Atrench technology. The devi

Datasheet: BUK7608-55A , BUK7609-55A , BUK7609-75A , BUK7610-100B , BUK7610-55AL , BUK7611-55A , BUK7611-55B , BUK7613-75B , IRFB4227 , BUK7619-100B , BUK761R8-30C , BUK7620-100A , BUK7620-55A , BUK7623-75A , BUK7624-55A , BUK7626-100B , BUK7628-100A .

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