All MOSFET. BUK9107-55ATE Datasheet

 

BUK9107-55ATE Datasheet and Replacement


   Type Designator: BUK9107-55ATE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: D2PAK
 

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BUK9107-55ATE Datasheet (PDF)

 ..1. Size:376K  philips
 buk9107-55ate buk9907-55ate.pdf pdf_icon

BUK9107-55ATE

BUK91/9907-55ATETrenchPLUS logic level FETRev. 01 7 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on state resistance and TrenchPLUSdiodes for clamping, ElectroStatic Discharge (ESD) protection and temperaturesensing.Product availability:BUK9107-55ATE in

 9.1. Size:67K  philips
 buk9120-48tc 3.pdf pdf_icon

BUK9107-55ATE

Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FETwith temperature sensing diodesGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 45 55 Vsuitable for surfa

Datasheet: BUK7Y20-30B , BUK7Y25-40B , BUK7Y28-75B , BUK7Y33-100B , BUK7Y35-55B , BUK7Y53-100B , BUK7Y54-75B , BUK9107-40ATC , 60N06 , BUK9207-30B , BUK9209-40B , BUK9212-55B , BUK9213-30A , BUK9214-30A , BUK92150-55A , BUK9215-55A , BUK9217-75B .

History: AP18T20GH | NTP6412AN | IRF7329

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