BUK9107-55ATE Specs and Replacement
Type Designator: BUK9107-55ATE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: D2PAK
BUK9107-55ATE substitution
BUK9107-55ATE datasheet
buk9107-55ate buk9907-55ate.pdf
BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 7 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability BUK9107-55ATE in... See More ⇒
buk9120-48tc 3.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 45 55 V suitable for surfa... See More ⇒
Detailed specifications: BUK7Y20-30B , BUK7Y25-40B , BUK7Y28-75B , BUK7Y33-100B , BUK7Y35-55B , BUK7Y53-100B , BUK7Y54-75B , BUK9107-40ATC , IRFZ48N , BUK9207-30B , BUK9209-40B , BUK9212-55B , BUK9213-30A , BUK9214-30A , BUK92150-55A , BUK9215-55A , BUK9217-75B .
Keywords - BUK9107-55ATE MOSFET specs
BUK9107-55ATE cross reference
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BUK9107-55ATE substitution
BUK9107-55ATE replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
