All MOSFET. BUK9107-55ATE Datasheet


BUK9107-55ATE MOSFET. Datasheet pdf. Equivalent

Type Designator: BUK9107-55ATE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 272 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 108 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0062 Ohm

Package: D2PAK

BUK9107-55ATE Transistor Equivalent Substitute - MOSFET Cross-Reference Search


BUK9107-55ATE Datasheet (PDF)

1.1. buk9107-55ate buk9907-55ate.pdf Size:376K _philips


BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 7 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: BUK9107-55ATE in SOT426

5.1. buk9120-48tc 3.pdf Size:67K _philips


Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FET with temperature sensing diodes GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 45 55 V suitable for surface

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