BUK9107-55ATE MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9107-55ATE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 108 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: D2PAK
BUK9107-55ATE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9107-55ATE Datasheet (PDF)
buk9107-55ate buk9907-55ate.pdf
BUK91/9907-55ATETrenchPLUS logic level FETRev. 01 7 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on state resistance and TrenchPLUSdiodes for clamping, ElectroStatic Discharge (ESD) protection and temperaturesensing.Product availability:BUK9107-55ATE in
buk9120-48tc 3.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK9120-48TC Voltage clamped logic level FETwith temperature sensing diodesGENERAL DESCRIPTION QUICK REFERENCE DATAProtected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNITmode logic level field-effect powertransistor in a plastic envelope V(CL)DSR Drain-source clamp voltage 40 45 55 Vsuitable for surfa
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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