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INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOK20S60 FEATURES With TO-247 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 V GSS Drain Current-Continuous@T =25 C 20 I A D 14 T =100 C I Drain Current-Single Pulsed 80 A DM P Total Dissipation 266 W D T Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.47 /W Rth(ch-a) Channel-to-ambient thermal resistance 4

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 aok20s60.pdf Проектирование, MOSFET, Мощность

 aok20s60.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 aok20s60.pdf База данных, Инновации, ИМС, Транзисторы