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isc Silicon NPN Power Transistor BD139 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 0.15A FE C Collector-Emitter Sustaining Voltage - V = 80V(Min) CEO(SUS) Complement to type BD140 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 1.5 A C I Base Current-Continuous 0.5 A B Collector Power Dissipation 1.25 @ T =25 a P W C Collector Power Dissipation 12.5 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER