Скачать даташит для ixtk102n30p:

Isc N-Channel MOSFET Transistor IXTK102N30P FEATURES With To-3PL package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 300 V DSS V Gate-Source Voltage 30 V GSS I Drain Current-Continuous 102 A D I Drain Current-Single Pulsed 250 A DM P Total Dissipation @T =25 700 W D C T Max. Operating Junction Temperature 150 ch Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.18 /W Rth(ch-a) Channel-to-ambient thermal resistance 62 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark