Скачать даташит для smbt3906_mmbt3906:

SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type 2 SMBT3904/ MMBT3904 (NPN) 1 VPS05161 Type Marking Pin Configuration Package SMBT3906/ MMBT3906 s2A SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 5 Emitter-base voltage VEBO 200 mA Collector current IC 330 mW Total power dissipation- Ptot TS = 71 C 150 C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit K/W Junction - soldering point1) RthJS 240 1For calculation of R please refer to Application Note Thermal Resistance thJA Jul-28-2003 1 SMBT3906/ MMBT3906 Electrical Characteristics at TA = 25 C, unless otherwise specified Parame