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2N6796 MECHANICAL DATA Dimensions in mm (inches) TMOS FET TRANSISTOR N CHANNEL FEATURES VDSS = 100V ID = 8A ! RDSON = 0.18 TO 39 METAL PACKAGE Underside View PIN 1 Source PIN 2 Gate PIN 3 Drain Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless otherwise stated) VDSS Drain Source Voltage 100V VDGR Drain Gate Voltage (RGS = 1.0m ) 100V VGS Gate Source Voltage 20V ID Drain Current Continuous 8.0A IDM Drain Current Pulsed 32A PD Total Device Dissipation @ TC = 25 C 25W Derate above 25 C 0.2W/ CW TJ , TSTG Operating and Storage Junction Temperature Range 55

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 2n6796.pdf Проектирование, MOSFET, Мощность

 2n6796.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n6796.pdf База данных, Инновации, ИМС, Транзисторы